Influence of interlayer coupling and intra-layer Coulomb interaction on electronic transport in bilayer graphene

Calculations of renormalized perpendicular conductivity within Kubo formula employing single particle temperature dependent Green's function formalism for bilayer graphene has been attempted. On the basis of numerical analysis, perpendicular conductivity as a function of temperature, interlayer coupling, onsite Coulomb interaction and carrier concentration per site has been analyzed for both AA- and AB-stacked bilayer graphene. It is found that perpendicular conductivity increases with interlayer coupling and also with temperature at low temperatures while at higher temperatures, there is saturation in perpendicular conductivity. Influences of onsite Coulomb interaction and carrier concentration per site on perpendicular conductivity is just opposite to each other while onsite Coulomb energy suppresses the rate of increase of σ_⊥/σ_⊥0 with temperature, on the other hand increase in carrier density per site enhance this rate significantly. Finally, theoretically obtained results on temperature dependent perpendicular conductivity are viewed in terms of electronic transport data as well as recent theoretical works available in bilayer graphene.     

Atmospheric pressure plasma treatment on graphene grown by chemical vapor deposition

We demonstrate the surface treatment of graphene using an atmospheric pressure plasma jet (APPJ) system. The graphene was synthesized by a thermal chemical vapor deposition with methane gas. A Mo foil and a SiO₂ wafer covered by Ni films were employed to synthesize monolayer and mixed-layered graphene, respectively. The home-built APPJ system was ignited using nitrogen gas to functionalize the graphene surface, and we studied the effect of different treatment times and interdistance between the plasma jet and the graphene surface. After the APPJ treatment, the hydrophobic character of graphene surface changed to hydrophilic. We found that the change is due to the formation of functionalities such as hydroxyl and carboxyl groups. Furthermore, it is worth noting that the nitrogen plasma treatment induced charge doping on graphene, and the pyridinic nitrogen component in the X-ray photoelectron spectroscopy spectrum was significantly enhanced. We conclude that the atmospheric pressure plasma treatment enables controlling the graphene properties without introducing surface defects.     

Dune morphodynamics

The physics of dunes relies on the interaction between a wind flow and an erodible topography. Thus, if strong enough to transport grains, the wind shapes sandy areas into dune fields. These dunes are reminiscent of a wavy sea so that sandy deserts are called sand seas. However, the comparison stops there. Contrary to water waves, dunes propagate only under wind action and when the wind stops, they do not vanish but stand. Consequently, dunes are not only the result of the present winds, but can integrate the wind regimes over long periods. Thus, they exhibit a range of shapes and sizes with superimposed patterns. They are witnesses of past wind regimes and their shape and orientation are used to constraint climatic models on other planetary bodies where they are observed as well (e.g., Mars, Titan and Venus). Here, we discuss the morphodynamics of dunes and endeavor to identify and to explain the physical mechanisms at play in the selection of their shape, size and orientation, whilst focusing on Earth desert sand dunes.     

Effect of the thickness of InGaN interlayer on a-plane GaN epilayer

In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate.     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Anisotropic resistivity of the monolayer graphene in the trigonal warping and connected Fermi curve regimes

In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity on the Fermi energy. At low energies, in the vicinity of the Dirac points, band energy of the monolayer graphene is isotropic at the Fermi level. Meanwhile, at the intermediate Fermi energies anisotropic effects such as trigonal warping is expected to be the origin of the anisotropic resistivity. However, besides the band anisotropy there also exists an other source of anisotropic resistivity which was introduced by scattering matrix. At high energies it was shown that the band anisotropy is less effective than the anisotropy generated by the scattering matrix. It was also shown that there exist two distinct regimes of anisotropic resistivity corresponding the trigonal warping and connected Fermi curve at intermediate and high energies respectively.     

Nonlocal Interaction Equations in Environments with Heterogeneities and Boundaries

We study well-posedness of a class of nonlocal interaction equations with spatially dependent mobility. We also allow for the presence of boundaries and external potentials. Such systems lead to the study of nonlocal interaction equations on subsets ? of ? ^d endowed with a Riemannian metric g. We obtain conditions, relating the interaction potential and the geometry, which imply existence, uniqueness and stability of solutions. We study the equations in the setting of gradient flows in the space of probability measures on ? endowed with Riemannian 2-Wasserstein metric.     

二维柱坐标系辐射输运方程保球对称的离散纵标格式

 离散纵标格式是计算辐射输运方程的常用格式之一. 但是, 传统的离散纵标格式求解二维柱坐标系辐射输运方程模拟一维球对称问题时, 会出现明显的非对称现象, 球对称性被破坏. 针对该问题, 本文分析了传统离散纵标格式不能够保持球对称性的原因, 提出了空间基于柱坐标系、方向基于球坐标系的辐射输运方程, 并对该方程设计了新的离散纵标格式, 从理论上证明了当空间网格取球对称剖分时该离散格式能够保持一维球对称性的充分必要条件. 通过对真空球区域辐射输运、与物质耦合辐射输运等球对称算例的数值模拟, 验证了该格式的保球对称性, 球对称误差能够达到机器精度. 非对称辐射驱动模型以及非对称网格剖分条件下的数值模拟等算例也取得了较好的结果.     

Semiclassical matrix model for quantum chaotic transport with time-reversal symmetry

We show that the semiclassical approach to chaotic quantum transport in the presence of time-reversal symmetry can be described by a matrix model. In other words, we construct a matrix integral whose perturbative expansion satisfies the semiclassical diagrammatic rules for the calculation of transport statistics. One of the virtues of this approach is that it leads very naturally to the semiclassical derivation of universal predictions from random matrix theory.